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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3762
DESCRIPTION With TO-3PML package High speed switching High current capability APPLICATIONS For use in high speed and power switching applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER

CHA IN
Collector current Collector dissipation
Collector-base voltage
E SEM NG
Open emitter Open base Open collector
CONDITIONS
OND IC
TOR UC
MAX 150 100 6 15 UNIT V V V A W ae ae
Collector-emitter voltage
Emitter-base voltage
TC=25ae
65 150 -55~150
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN
2SC3762
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ;IB=0
100
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=10A ;IB=1A
0.6
V
VBEsat
Base-emitter saturation voltage
IC=10A ;IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=100V ;IE=0
10
|I
A
IEBO
Emitter cut-off current
hFE
IN
DC current gain

VEB=4V; IC=0
ANG CH
MIC E SE
IC=5A ; VCE=5V
DUC ON
30
TOR
10 |I 120
A
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3762

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions
3

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